| PART |
Description |
Maker |
| 2N6764 |
N-Channel Power MOSFETs/ 38A/ 60V/100V
|
Fairchild Semiconductor
|
| STB45NF06L STP45NF06L |
N-CHANNEL 60V - 0.022OHM - 38A TO-220/D2PAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET⑩ II POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFETII POWER MOSFET N沟道60V 0.022ohm - 38A条，220 / D2PAK封装STripFET⑩二功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| JANTXV2N6764 JANTX2N6764 |
POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.055ohm/ Id=38A)
POWER MOSFET N-CHANNEL(BVdss=100V Rds(on)=0.055ohm Id=38A)
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)
|
IRF[International Rectifier]
|
| RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
40A 100V 0.040 Ohm N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| STD38NF03L |
N-CHANNEL 30V - 0.011 OHM - 38A DPAK STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IXFH9N80Q IXFT9N80Q |
HiPerFET Power MOSFETs Q-Class 9 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC[ETC]
|
| IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs
CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
